| 1 | \documentclass{article} |
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| 2 | \usepackage{fullpage} |
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| 3 | \usepackage{pstricks} |
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| 4 | \begin{document} |
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| 5 | \begin{enumerate} |
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| 6 | \item Chemical vapor deposition |
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| 7 | |
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| 8 | \begin{center} |
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| 9 | \input{cvdbox} |
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| 10 | \end{center} |
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| 11 | |
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| 12 | A CVD reactor, pictured above, pases a dilute mixture of silane gas (SiH$_4$) |
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| 13 | in argon over heated substrates to deposit a layer of silicon. The screen at |
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| 14 | the entrance distributes the flow evenly over the entrance, so the velocity |
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| 15 | profile there is uniform. Assume the deposition is diffusion-limited, so the |
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| 16 | equilibrium SiH$_4$ concentration at the substrates is zero, and ignore |
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| 17 | exit conditions and natural convection instabilities (due to the placement of |
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| 18 | hot substrates below the cooler gas). |
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| 19 | |
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| 20 | Data: |
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| 21 | \begin{itemize} |
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| 22 | \item chamber dimensions: 0.75m high $\times$ 2m wide $\times$ 2m long |
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| 23 | \item argon viscosity $\rm\eta=3\times10^{-5}\frac{N\cdot s}{m^2}$ |
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| 24 | \item silane diffusivity in argon $D_{\rm SiH_4}=2\times10^{-4}\frac{\rm |
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| 25 | m^2}{\rm s}$ |
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| 26 | \item silicon density $\rm\rho_{Si}=2500\frac{kg}{m^3}$ |
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| 27 | \end{itemize} |
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| 28 | |
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| 29 | \begin{enumerate} |
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| 30 | \item Calculate the mass transfer Prandtl number in the (mostly argon) gas at |
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| 31 | an operating temperature of 500K and pressure of 0.1 atm (you may need the |
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| 32 | ideal gas law for the argon density). |
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| 33 | |
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| 34 | \item Given a flow rate of $0.3\rm\frac{m^3}{s}$, calculate the Reynolds |
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| 35 | number Re$_H$. Is the flow likely to be laminar or turbulent? |
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| 36 | |
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| 37 | \item Treating the entire bottom of the chamber as a substrate, sketch the |
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| 38 | velocity and concentration boundary layers over the region as accurately as |
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| 39 | you can. |
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| 40 | |
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| 41 | \item Using a concentration of 1 mol\% silane in the gas, calculate the |
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| 42 | diffusive flux of silane to the substrates at distances of 10 cm and 30 cm |
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| 43 | from the entrance. |
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| 44 | |
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| 45 | \item Calculate the deposition rate in $\rm\frac{nm}{sec}$ at a location 10 |
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| 46 | cm from the entrance, and another 30 cm from the entrance. If a wafer is |
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| 47 | placed near the entrance, how uniform will the deposited layer be |
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| 48 | (qualitatively)? |
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| 49 | |
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| 50 | \item How would you change the design to make the deposited layer more |
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| 51 | uniform? |
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| 52 | \end{enumerate} |
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| 53 | \end{enumerate} |
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| 54 | \end{document} |
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