root/trunk/matml/transport/problems/cvd/cvd.tex

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New problems: cvd, dopantdrive, platedrag, tubeturb; keyword macroscopic balance

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1\documentclass{article}
2\usepackage{fullpage}
3\usepackage{pstricks}
4\begin{document}
5\begin{enumerate}
6\item Chemical vapor deposition
7
8  \begin{center}
9    \input{cvdbox}
10  \end{center}
11 
12  A CVD reactor, pictured above, pases a dilute mixture of silane gas (SiH$_4$)
13  in argon over heated substrates to deposit a layer of silicon.  The screen at
14  the entrance distributes the flow evenly over the entrance, so the velocity
15  profile there is uniform.  Assume the deposition is diffusion-limited, so the
16  equilibrium SiH$_4$ concentration at the substrates is zero, and ignore
17  exit conditions and natural convection instabilities (due to the placement of
18  hot substrates below the cooler gas).
19
20  Data:
21  \begin{itemize}
22  \item chamber dimensions: 0.75m high $\times$ 2m wide $\times$ 2m long
23  \item argon viscosity $\rm\eta=3\times10^{-5}\frac{N\cdot s}{m^2}$
24  \item silane diffusivity in argon $D_{\rm SiH_4}=2\times10^{-4}\frac{\rm
25      m^2}{\rm s}$
26  \item silicon density $\rm\rho_{Si}=2500\frac{kg}{m^3}$
27  \end{itemize}
28
29  \begin{enumerate}
30  \item Calculate the mass transfer Prandtl number in the (mostly argon) gas at
31    an operating temperature of 500K and pressure of 0.1 atm (you may need the
32    ideal gas law for the argon density).
33
34  \item Given a flow rate of $0.3\rm\frac{m^3}{s}$, calculate the Reynolds
35    number Re$_H$.  Is the flow likely to be laminar or turbulent?
36
37  \item Treating the entire bottom of the chamber as a substrate, sketch the
38    velocity and concentration boundary layers over the region as accurately as
39    you can.
40
41  \item Using a concentration of 1 mol\% silane in the gas, calculate the
42    diffusive flux of silane to the substrates at distances of 10 cm and 30 cm
43    from the entrance.
44
45  \item Calculate the deposition rate in $\rm\frac{nm}{sec}$ at a location 10
46    cm from the entrance, and another 30 cm from the entrance.  If a wafer is
47    placed near the entrance, how uniform will the deposited layer be
48    (qualitatively)?
49
50  \item How would you change the design to make the deposited layer more
51    uniform?
52  \end{enumerate}
53\end{enumerate}
54\end{document}
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