| 1 | \documentclass{article} |
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| 2 | \usepackage{fullpage} |
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| 3 | \begin{document} |
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| 4 | \begin{enumerate} |
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| 5 | \item Growth of a TiSi intermetallic layer |
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| 6 | |
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| 7 | \begin{center} |
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| 8 | $\ $\pdfximage{tisi.png}\pdfrefximage\pdflastximage$\ $ |
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| 9 | \end{center} |
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| 10 | |
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| 11 | Titanium vapor is deposited on silicon at a high enough temperature to |
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| 12 | produce a high-quality smooth titanium film with few defects. At that high |
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| 13 | temperature, the titanium and silicon react, producing an intermetallic |
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| 14 | titanium-silicon compound at the interface, which acts as a diffusion barrier |
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| 15 | preventing aluminum interconnect wires deposited later from diffusing into |
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| 16 | the silicon and disappearing. (A low-diffusivity AlTi layer also forms at |
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| 17 | the aluminum-titanium interface, but we'll focus on TiSi here.) |
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| 18 | |
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| 19 | Suppose that layer is TiSi, that is, 50 mol\% titanium, 50 mol\% silicon. It |
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| 20 | is a contiguous layer, with uniform thickness, and its growth is limited by |
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| 21 | one of two mechanisms: |
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| 22 | \begin{itemize} |
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| 23 | \item Diffusion of titanium through the TiSi layer with diffusivity $D$. |
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| 24 | \item Reaction of silicon at Si-TiSi interface with reaction rate coefficient |
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| 25 | $k$. |
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| 26 | \end{itemize} |
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| 27 | You may assume the following: |
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| 28 | \begin{itemize} |
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| 29 | \item The TiSi-Ti interface is at equilibrium. |
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| 30 | \item The concentration profile across the intermetallic layer is linear |
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| 31 | ({\i.e.} pseudo-steady-state diffusion). |
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| 32 | \item Ignore changes in the thickness of the Ti film over time. (That is, |
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| 33 | for simplicity, assume the whole Ti film is deposited, then the |
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| 34 | intermetallic layer starts to grow.) |
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| 35 | \item The (simplified) phase diagram looks something like: |
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| 36 | \end{itemize} |
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| 37 | \begin{center} |
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| 38 | $\ $\pdfximage{tisiphase.png}\pdfrefximage\pdflastximage$\ $ |
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| 39 | \end{center} |
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| 40 | |
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| 41 | \begin{enumerate} |
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| 42 | \item Write the mass transfer Biot number which compares the limiting |
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| 43 | reaction and diffusion mechanisms. Which mechanism limits the growth rate |
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| 44 | if this number is large? |
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| 45 | |
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| 46 | \item Sketch the concentration of titanium $C_{\rm Ti}$ in mol\% as a |
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| 47 | function of distance from the top surface $z$ for small and large values of |
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| 48 | the Biot number. Which corresponds to a ``short time'', and which to a |
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| 49 | ``long time''? |
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| 50 | |
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| 51 | \item Sketch the relationship between TiSi layer thickness $Y$ and time $t$, |
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| 52 | giving the exponents of both short- and long-time behavior ({\em i.e.} the |
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| 53 | $n$ in $Y\propto t^n$). |
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| 54 | \end{enumerate} |
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| 55 | \end{enumerate} |
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| 56 | \end{document} |
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